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  ? semiconductor components industries, llc, 2013 september, 2013 ? rev. 7 1 publication order number: mbrs260t3/d MBRS260T3G, nrvbs260t3g surface mount schottky power rectifier smb power surface mount package this device employs the schottky barrier principle in a metal ? to ? silicon power rectifier. features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. features ? compact package with j ? bend leads ideal for automated handling ? highly stable oxide passivated junction ? guard ? ring for over ? voltage protection ? low forward voltage drop ? nrvb prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these are pb ? free devices mechanical characteristics ? case: molded epoxy ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: 95 mg (approximately) ? cathode polarity band ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? esd ratings: ? machine model = c ? human body model = 3b smb case 403a schottky barrier rectifier 2.0 amperes, 60 volts http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. marking diagram b26 = specific device code a = assembly location y = year ww = work week  = pb ? free package ayww b26   (note: microdot may be in either location) device package shipping ? ordering information MBRS260T3G smb (pb ? free) 2,500 / tape & reel nrvbs260t3g smb (pb ? free) 2,500 / tape & reel
MBRS260T3G, nrvbs260t3g http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 60 v average rectified forward current (at rated v r , t l = 95 c) i o 2.0 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 60 a storage temperature range t stg ? 55 to +150 c operating junction temperature t j ? 55 to +125 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/  s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? lead (note 1) thermal resistance, junction ? to ? ambient (note 2) r  jl r  ja 24 80 c/w 1. mounted with minimum recommended pad size, pc board fr4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on fr4 board. electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 3) (i f = 1.0 a) (i f = 2.0 a) v f t j = 25 c t j = 125 c v 0.51 0.63 0.475 0.55 maximum instantaneous reverse current (note 3) (v r = 60 v) i r t j = 25 c t j = 125 c ma 0.2 20 3. pulse test: pulse width 250  s, duty cycle 2.0%.
MBRS260T3G, nrvbs260t3g http://onsemi.com 3 figure 1. typical forward voltage i f , instantaneous forward current (a) v f , instantaneous forward voltage (v) figure 2. maximum forward voltage v f , instantaneous forward voltage (v) i f , instantaneous forward current (a) figure 3. typical reverse current i r , reverse current (a) v r , reverse voltage (v) figure 4. typical capacitance t a = 75 c t a = 25 c 10 30 02040 10 c, capacitance (pf) v r , reverse voltage (volts) t a = 125 c 50 60 100 25 c f = 1 mhz 0.1 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 t a = 150 c t a = ? 40 c 0.1 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 t a = 125 c t a = 75 c t a = 150 c t a = 25 c t a = ? 40 c 0 102030405060 1.0e ? 01 1.0e ? 02 1.0e ? 03 1.0e ? 04 1.0e ? 05 1.0e ? 06 1.0e ? 07 t a = 150 c t a = 125 c t a = 75 c t a = 25 c figure 5. current derating ? junction to lead i f , average forward current (a) t l , lead temperature ( c) figure 6. forward power dissipation 0.5 1.5 01 2 0 0.2 p fo , average power dissipation (w) i o , average forward current (amps) 0.4 0.6 2.5 3 1 1.8 2 0.8 1.2 1.4 1.6 dc square wave 0 0.5 1 1.5 2 2.5 3 3.5 60 70 80 90 100 110 120 130 140 150 dc square wave r  jl = 24 c/w
MBRS260T3G, nrvbs260t3g http://onsemi.com 4 figure 7. thermal response ? junction to case figure 8. thermal response ? junction to ambient 0.1 0.00001 t, time (s) 1.0e+00 1.0e ? 01 1.0e ? 02 1.0e ? 03 1.0e ? 04 0.0001 0.001 0.01 1.0 10 100 1000 50% 20% 10% 5.0% 2.0% 1.0% r tjl(t) = r tjl*r(t) t, time (s) 1.0e+00 1.0e ? 01 1.0e ? 02 1.0e ? 03 1.0e ? 04 50% 20% 10% 5.0% 2.0% 1.0% r t , transient thermal resistance (normalized) r t , transient thermal resistance (normalized) 0.1 0.00001 0.0001 0.001 0.01 1.0 10 100 1000 r tjl(t) = r tjl*r(t)
MBRS260T3G, nrvbs260t3g http://onsemi.com 5 package dimensions smb case 403a ? 03 issue j e b d c l1 l a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension b shall be measured within dimension l1. 2.261 0.089 2.743 0.108 2.159 0.085  mm inches  scale 8:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max min millimeters 1.95 2.30 2.47 0.077 inches a1 0.05 0.10 0.20 0.002 b 1.96 2.03 2.20 0.077 c 0.15 0.23 0.31 0.006 d 3.30 3.56 3.95 0.130 e 4.06 4.32 4.60 0.160 l 0.76 1.02 1.60 0.030 0.091 0.097 0.004 0.008 0.080 0.087 0.009 0.012 0.140 0.156 0.170 0.181 0.040 0.063 nom max 5.21 5.44 5.60 0.205 0.214 0.220 h e 0.51 ref 0.020 ref d l1 h e polarity indicator optional as needed on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbrs260t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


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